Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

• Debashis De,
• Sitangshu Bhattacharya,
• S. M. Adhikari,
• A. Kumar,
• P. K. Bose and
• K. P. Ghatak

Beilstein J. Nanotechnol. 2011, 2, 339–362, doi:10.3762/bjnano.2.40

• effective mass superlattices; quantum well wire effective mass superlattices; Introduction With the advent of modern fabrication techniques [1], semiconductors with superlattice structures (SLs) [2], in which alternate layers of two different degenerate materials set up a periodic potential with a

• , λ, Eg0i) and β'0 (E, λ, Eg0i, Δi) should be replaced by ρ'0 (E, λ, Eg0i), where 2 Photoemission from quantum well wire effective mass superlattices The electron dispersion relation in this case is given by where, ny and nz are size quantum numbers along the y and z directions, dy and dz are the

• the normalized photocurrent from quantum well wire effective mass superlattices of HgTe/Hg1−xCdxTe as a function of film thickness in which the curves (a), (b) and (c) represent the perturbed three and two band models of Kane and parabolic energy bands, respectively. The curves (d), (e) and (f